Voltage controlled Néel vector rotation in zero magnetic field

Abstract Multi-functional thin films of boron (B) doped Cr 2 O 3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence an applied magnetic field, H . Toggling antiferromagnetic states is demonstrated prototype device structures at CMOS compatible temperatures between 300 400 K. The boundary magnetization associated with orientation serves as state variable which read via magnetoresistive detection a Pt Hall bar adjacent to B:Cr film. Switching voltage zero non-zero values implies rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport scanning probe microscopy measurements reveal B-dependent T N resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis gate dependent magnetization. combined effect enables = 0, controlled, high-temperature. Theoretical modeling estimates switching speeds about 100 ps making promising multifunctional single-phase material for energy efficient memory applications.